Preparation of Si3N4-SiC Films by Plasma CVD
نویسندگان
چکیده
منابع مشابه
Fluorinated SiC CVD
For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such a man...
متن کاملCVD growth of 3C-SiC on 4H-SiC substrate
The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...
متن کاملPlasma CVD of hydrogenated boron-carbon thin films from triethylboron.
Low-temperature chemical vapor deposition (CVD) of B-C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B-C films. Herein, we demonstrate plasma CVD of B-C thin films using triethylboron (TEB) as a single sour...
متن کاملPREPARATION OF SiC FILMS BY PHOTOCHEMICAL VAPOUR DEPOSITION USING A D2 LAMP
Sic films have been prepared by photochemical vapour deposition using a D lamp from a gas mixture of CH3SiC13+H +Ar on a grapaite plate. The deposition temperature o$ the Sic films of a single phase was lowered by irradiation with a D2 lamp by 50°C as compared to that without irradiation. Furthermore, the deposition rate was increased with irradiation by 1.2-2.8 times as compared to that withou...
متن کاملSiC epitaxy growth using chloride-based CVD
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Ceramic Association, Japan
سال: 1986
ISSN: 1884-2127,0009-0255
DOI: 10.2109/jcersj1950.94.22